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FDB047N10 Datasheet PDF - ON Semiconductor

Manufacturer:

ON Semiconductor

Category:

MOSFETs

Case Package:

TO-263-3

Description:

MOSFET Transistor, N Channel, 120A, 100V, 0.0039Ω, 10V, 3.5V

Pictures:

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Documentation:

FDB047N10 Datasheet (8 Pages)

Package Outline Dimension on7 Page

Part Numbering System on2 Page

FDB047N10 Datasheet PDF (8 Pages)

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FDB047N10 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Case/Package

TO-263-3

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

0.0039 Ω

Power Dissipation

375 W

Threshold Voltage

3.5 V

Drain to Source Voltage (Vds)

100 V

Rise Time

386 ns

Input Capacitance (Ciss)

11500pF @25V(Vds)

Input Power (Max)

375 W

Fall Time

244 ns

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

375 W

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FDB047N10 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Material

Silicon

Size-Length

10.67 mm

Size-Width

11.33 mm

Size-Height

4.83 mm

Operating Temperature

-55℃ ~ 175℃

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FDB047N10 Environmental

FDB047N10 Function Overview

FDB047N10 Documents

FDB047N10 Datasheet

ON Semiconductor

8 Pages / 0.99 MByte

FDB047N10 Other Datasheet PDF

ON Semiconductor

18 Pages / 0.94 MByte

FDB047N10 Notice File

ON Semiconductor

7 Pages / 0.87 MByte

FDB047 Documents

FDB047N10 Datasheet PDF

ON Semiconductor

MOSFET Transistor, N Channel, 120A, 100V, 0.0039Ω, 10V, 3.5V

FDB047N10 Datasheet PDF

Fairchild

Power Field-Effect Transistor, 120A I(D), 100V, 0.0047Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, D2PAK-3

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