FDC608PZ-F171 Datasheet PDF - ON Semiconductor

●This P-Channel 2.5V specified MOSFET is produced using ON Semiconductor"s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery power circuits, and DC/DC conversions.

●Features

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● -5.8A, -20V, RDS(on) = 30mΩ @ VGS = -4.5V RDS(on) = 43mΩ @ VGS = -2.5V

● Low gate charge

● High performance trench technology for extremely low RDS(on)

● SuperSOT™ ¨C6 package: small footprint (72% smaller than standard SO¨C8) low profile (1mm thick)