FDN336P Datasheet PDF - ON Semiconductor

●The FDN336P is a 2.5V specified P-channel MOSFET produced using Fairchild Semiconductor"s advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. It is well suited for load switching, battery charging circuits and DC-to-DC conversion. The SuperSOT™-3 provides low RDS (ON) and 30% higher power handling capability than SOT23 in the same footprint.

● High performance Trench technology for extremely low RDS (ON)

● 3.6nC Typical low gate charge