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FDN5618P
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FDN5618P Datasheet PDF (5 Pages)
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FDN5618P Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
-60.0 V
Current Rating
-1.25 A
Case/Package
SOT-23-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
170 mΩ
Polarity
P-Channel
Power Dissipation
500 mW
Threshold Voltage
20 V
Input Capacitance
430 pF
Gate Charge
8.60 nC
Drain to Source Voltage (Vds)
60 V
Breakdown Voltage (Drain to Source)
-200 V
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
1.20 A
Rise Time
8 ns
Input Capacitance (Ciss)
430pF @30V(Vds)
Input Power (Max)
460 mW
Fall Time
4 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
500mW (Ta)

FDN5618P Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
2.92 mm
Size-Width
1.4 mm
Size-Height
0.94 mm
Operating Temperature
-55℃ ~ 150℃

FDN5618P Documents

Fairchild
5 Pages / 0.2 MByte
Fairchild
8 Pages / 0.09 MByte
Fairchild
1 Pages / 0.04 MByte
Fairchild
8 Pages / 0.37 MByte
Fairchild
1 Pages / 0.15 MByte

FDN5618 Documents

Fairchild
60V P-Channel Logic Level PowerTrench MOSFET
ON Semiconductor
MOSFET P-CH 60V 1.25A SSOT3
Fairchild
FAIRCHILD SEMICONDUCTOR FDN5618P MOSFET Transistor, P Channel, 1.2A, -60V, 170mohm, -10V, -1.6V
Freescale
MOSFET P-CH 60V 1.25A SSOT3
Fairchild
60V P-Channel Logic Level PowerTrench MOSFET
Fairchild
60V P-Channel Logic Level PowerTrench MOSFET
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