$ 160.427

FF450R12KT4 Datasheet PDF - Infineon

Manufacturer:

Infineon

Category:

IGBTs

Case Package:

AG-62MM-1

Description:

Trans IGBT Module N-CH 1200V 580A 2400000mW 7Pin 62MM Tray

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

FF450R12KT4 Datasheet (8 Pages)FF450R12KT4 User Reference Manual Guide (36 Pages)FF450R12KT4 Application Note (40 Pages)

FF450R12KT4 Datasheet PDF (8 Pages)

View Datasheet

Click page to view the detail

FF450R12KT4 Specifications

TYPE

DESCRIPTION

Mounting Style

Screw

Number of Pins

7 Pin

Case/Package

AG-62MM-1

Power Rating

2.4 kW

Number of Positions

7 Position

Polarity

NPN

Power Dissipation

2.4 kW

Breakdown Voltage (Collector to Emitter)

1200 V

Input Capacitance (Cies)

28nF @25V

Input Power (Max)

2400 W

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-40 ℃

Power Dissipation (Max)

2.4 kW

View Datasheet >

FF450R12KT4 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Box

Size-Length

106.4 mm

Size-Width

61.4 mm

Size-Height

30.5 mm

Operating Temperature

-40℃ ~ 125℃

View Datasheet >

FF450R12KT4 Environmental

FF450R12KT4 Export Classifications

FF450R12KT4 Function Overview

FF450R12KT4 Documents

FF450R12KT4 Datasheet

Infineon

8 Pages / 0.26 MByte

FF450R12KT4 User Reference Manual Guide

Infineon

36 Pages / 3.45 MByte

FF450R12KT4 Other Datasheet PDF

Infineon

1 Pages / 0.01 MByte

FF450R12KT4 Application Note

Infineon

40 Pages / 6.73 MByte

FF450R12 Documents

FF450R12KT4 Datasheet PDF

Infineon

Trans IGBT Module N-CH 1200V 580A 2400000mW 7Pin 62MM Tray

FF450R12KE4 Datasheet PDF

Infineon

Trans IGBT Module N-CH 1200V 520A 2400000mW 7Pin 62MM Tray

FF450R12ME4 Datasheet PDF

Infineon

Trans IGBT Module N-CH 1.2kV 675A 11Pin

FF450R12KT4HOSA1 Datasheet PDF

Infineon

INFINEON FF450R12KT4HOSA1 IGBT Array & Module Transistor, Dual NPN, 580A, 1.75V, 2.4kW, 1.2kV, Module

FF450R12ME4EB11BPSA1 Datasheet PDF

Infineon

EconoDUAL™ 3 1200V Common Emitter IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled HE Diode, NTC, and PressFIT contact technology. For 3-level NPC2 topologies. Suited for 1000V and 1500V solar inverters in combination with a standard half-bridge EconoDUAL™ 3 IGBT module (e.g. FF450R12ME4_B11).

FF450R12ME4_B11 Datasheet PDF

Infineon

Trans IGBT Module N-CH 1.2kV 675A 11Pin

FF450R12KE4HOSA1 Datasheet PDF

Infineon

IGBT Array & Module Transistor, Dual NPN, 520A, 1.75V, 2.4kW, 1.2kV, Module

FF450R12ME3 Datasheet PDF

Infineon

Trans IGBT Module N-CH 1200V 600A 2100000mW 11Pin ECONOD-3 Tray

FF450R12ME4BOSA1 Datasheet PDF

Infineon

Trans IGBT Module N-CH 1200V 675A 2250000mW 11Pin ECONOD-3 Tray

FF450R12KE4EHOSA1 Datasheet PDF

Infineon

Our well-known 62mm C-series 1200V Common Emitter IGBT modules with Emitter Controlled HE diode and fast trench/fieldstop IGBT4. 3-level phase leg configurations are possible in combination with our 1200V 62mm dual modules (e.g. FF450R12KE4).