FM24CL16B-GTR Datasheet PDF - Cypress Semiconductor

●Description

●The FM24CL16B is a 16-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 38 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories.

●Features

●16K bit Ferroelectric Nonvolatile RAM

●• Organized as 2,048 x 8 bits

●• High Endurance 1014 Read/Writes

●• 38 year Data Retention

●• NoDelay™ Writes

●• Advanced High-Reliability Ferroelectric Process

●Fast Two-wire Serial Interface

●• Up to 1MHz Maximum Bus Frequency

●• Direct Hardware Replacement for EEPROM

●• Supports legacy timing for 100 kHz & 400 kHz

●Low Power Operation

●• 2.7 - 3.65V Operation

●• 100 A Active Current (100 kHz)

●• 3 A (typ.) Standby Current

●Industry Standard Configuration

●• Industrial Temperature -40 C to +85 C

●• 8-pin “Green”/RoHS SOIC and TDFN Packages