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Part Datasheet Search > MOSFETs > ON Semiconductor > FQA38N30 Datasheet PDF
FQA38N30
$ 3.249
FQA38N30 Datasheet PDF (8 Pages)
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FQA38N30 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-3-3
Power Dissipation
290 W
Drain to Source Voltage (Vds)
300 V
Rise Time
430 ns
Input Capacitance (Ciss)
4400pF @25V(Vds)
Input Power (Max)
290 W
Fall Time
190 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
290W (Tc)

FQA38N30 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

FQA38N30 Documents

ON Semiconductor
8 Pages / 0.77 MByte
ON Semiconductor
9 Pages / 0.51 MByte
ON Semiconductor
4 Pages / 0.62 MByte

FQA38 Documents

Fairchild
Power Field-Effect Transistor, 38.4A I(D), 300V, 0.085Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3Pin
ON Semiconductor
Trans MOSFET N-CH 300V 38.4A 3Pin(3+Tab) TO-3PN Rail
Freescale
MOSFET N-CH 300V 38.4A TO-3P
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