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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXFH26N60Q Datasheet PDF
IXFH26N60Q
$ 1.032
IXFH26N60Q Datasheet PDF (3 Pages)
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IXFH26N60Q Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
600 V
Current Rating
26.0 A
Case/Package
TO-247-3
Power Rating
360 W
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.25 Ω
Polarity
N-Channel
Power Dissipation
360 W
Threshold Voltage
4.5 V
Drain to Source Voltage (Vds)
600 V
Continuous Drain Current (Ids)
26.0 A
Rise Time
32 ns
Input Capacitance (Ciss)
5100pF @25V(Vds)
Input Power (Max)
360 W
Fall Time
16 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Junction Temperature (Max)
150 ℃
Power Dissipation (Max)
360W (Tc)

IXFH26N60Q Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Size-Width
5.3 mm
Weight
6 g
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFH26N60Q Documents

IXYS Semiconductor
3 Pages / 0.1 MByte
IXYS Semiconductor
20 Pages / 2.6 MByte

IXFH26N60 Documents

IXYS Semiconductor
TO-247AD N-CH 600V 26A
IXYS Semiconductor
TO-247 N-CH 600V 26A
IXYS Semiconductor
TO-247AD N-CH 600V 26A
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