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Part Datasheet Search > MOSFETs > Fairchild > FQB27N25TM_AM002 Datasheet PDF
FQB27N25TM_AM002
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FQB27N25TM_AM002 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Voltage Rating (DC)
250 V
Current Rating
25.5 A
Case/Package
TO-263-3
Drain to Source Resistance (on) (Rds)
110 mΩ
Polarity
N-Channel
Power Dissipation
3.13W (Ta), 180W (Tc)
Drain to Source Voltage (Vds)
250 V
Breakdown Voltage (Drain to Source)
250 V
Breakdown Voltage (Gate to Source)
±30.0 V
Continuous Drain Current (Ids)
25.5 A
Input Capacitance (Ciss)
2450pF @25V(Vds)
Power Dissipation (Max)
3.13W (Ta), 180W (Tc)

FQB27N25TM_AM002 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)

FQB27N25TM_AM002 Documents

Fairchild
9 Pages / 0.77 MByte
Fairchild
8 Pages / 0.95 MByte

FQB27N25 Documents

Fairchild
250V N-Channel MOSFET
ON Semiconductor
250V, 26A, 108mΩ, D2PAK N-Channel UltraFET®, TO-263 2L (D2PAK), 800-TAPE REEL
Fairchild
D2PAK N-CH 250V 25.5A
Fairchild
Trans MOSFET N-CH 250V 25.5A 3Pin TO-263AB T/R
Fairchild
MOSFET N-CH 250V 25.5A D2PAK
ON Semiconductor
MOSFET N-CH 250V 25.5A D2PAK
ON Semiconductor
Trans MOSFET N-CH 250V 25.5A 3Pin TO-263AB T/R
ON Semiconductor
250V, 26A, 108mΩ, D2PAK N-Channel UltraFET®, TO-263 2L (D2PAK), 800-TAPE REEL
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