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FQD2N80TM Datasheet PDF - ON Semiconductor

Manufacturer:

ON Semiconductor

Category:

MOSFETs

Case Package:

TO-252-3

Description:

N-Channel QFET® MOSFET 800V, 1.8A, 6.3Ω

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FQD2N80TM Datasheet PDF (9 Pages)

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FQD2N80TM Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Case/Package

TO-252-3

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

4.9 Ω

Power Dissipation

2.5 W

Threshold Voltage

5 V

Drain to Source Voltage (Vds)

800 V

Rise Time

30 ns

Input Capacitance (Ciss)

425pF @25V(Vds)

Input Power (Max)

2.5 W

Fall Time

28 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

2.5 W

FQD2N80TM Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Size-Length

6.6 mm

Size-Width

6.1 mm

Size-Height

2.3 mm

FQD2N80TM Environmental

FQD2N80TM Function Overview

FQD2N80TM Documents

FQD2N80TM Other Datasheet PDF

ON Semiconductor

9 Pages / 0.7 MByte

FQD2N80TM Notice File

ON Semiconductor

17 Pages / 0.52 MByte

FQD2N80 Documents

FQD2N80 Datasheet PDF

Fairchild

800V N-Channel MOSFET

FQD2N80 Datasheet PDF

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Power Field-Effect Transistor

FQD2N80TM Datasheet PDF

Fairchild

Power Field-Effect Transistor, 1.8A I(D), 800V, 6.3Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3

FQD2N80TM Datasheet PDF

ON Semiconductor

N-Channel QFET® MOSFET 800V, 1.8A, 6.3Ω

FQD2N80TF Datasheet PDF

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FQD2N80TM_WS Datasheet PDF

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MOSFET N-CH 800V 1.8A DPAK

FQD2N80TF Datasheet PDF

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Trans MOSFET N-CH 800V 1.8A 3Pin(2+Tab) DPAK T/R

FQD2N80TM_WS Datasheet PDF

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MOSFET N-CH 800V 1.8A DPAK

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