FQP33N10L Datasheet PDF - Fairchild

●General Description

●These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching

●performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as high efficiency

●switching DC/DC converters, and DC motor control.

●Features

●• 33A, 100V, RDS(on)= 0.052Ω@VGS= 10 V

●• Low gate charge ( typical 30 nC)

●• Low Crss ( typical 70 pF)

●• Fast switching

●• 100% avalanche tested

●• Improved dv/dt capability

●• 175°C maximum junction temperature rating