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Part Datasheet Search > MOSFETs > Infineon > IPP05CN10L G Datasheet PDF
IPP05CN10L G
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IPP05CN10L G Datasheet PDF - Infineon

Manufacturer:
Infineon
Category:
MOSFETs
Case Package:
TO-220-3
Description:
MOSFET Discrete Semiconductor Products MOSFETs, GaNFETs - Single - MOSFET N-CH 100V 100A TO220-3
Pictures:
3D Model
Symbol
Footprint
Pinout
Product Pictures
Documentation:
IPP05CN10L G User Reference Manual Guide (3 Pages)
IPP05CN10L G Datasheet PDF (3 Pages)
View Datasheet
Click page to view the detail

IPP05CN10L G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
5.1 mΩ
Polarity
N-Channel
Power Dissipation
300 W
Drain to Source Voltage (Vds)
100 V
Breakdown Voltage (Drain to Source)
100 V
Rise Time
288 ns
Input Capacitance (Ciss)
15600pF @50V(Vds)
Fall Time
37 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
300W (Tc)

IPP05CN10L G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tube
Size-Length
10 mm
Size-Width
4.4 mm
Size-Height
15.65 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IPP05CN10L G Documents

IPP05CN10L G User Reference Manual Guide
Infineon
3 Pages / 0.36 MByte
IPP05CN10L G Other Datasheet PDF
Infineon
12 Pages / 0.08 MByte

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The 100V OptiMOS™ family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (Figure of Merit).
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