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Part Datasheet Search > ON Semiconductor > FQPF10N60C Datasheet PDF
FQPF10N60C
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FQPF10N60C Datasheet PDF (12 Pages)
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FQPF10N60C Specifications

TYPE
DESCRIPTION
Number of Pins
3 Pin
Case/Package
TO-220-3
Drain to Source Voltage (Vds)
600 V
Rise Time
69 ns
Input Capacitance (Ciss)
1570pF @25V(Vds)
Input Power (Max)
50 W
Fall Time
77 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
50000 mW

FQPF10N60C Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube

FQPF10N60C Documents

ON Semiconductor
12 Pages / 1.43 MByte

FQPF10N60 Documents

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Power Field-Effect Transistor, 9.5A I(D), 600V, 0.73Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220F, 3Pin
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N-Channel QFET® MOSFET 600V, 9.5A, 730mΩ
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