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Part Datasheet Search > MOSFETs > ROHM Semiconductor > R6020ANZC8 Datasheet PDF
R6020ANZC8
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R6020ANZC8 Datasheet PDF (6 Pages)
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R6020ANZC8 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-3-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
170 mΩ
Polarity
N-CH
Power Dissipation
120 W
Threshold Voltage
2.95 V
Drain to Source Voltage (Vds)
600 V
Breakdown Voltage (Drain to Source)
600 V
Continuous Drain Current (Ids)
20A
Rise Time
60 ns
Input Capacitance (Ciss)
2040pF @25V(Vds)
Fall Time
70 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
120W (Tc)

R6020ANZC8 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Bulk
Material
Silicon
Operating Temperature
150℃ (TJ)

R6020ANZC8 Documents

ROHM Semiconductor
6 Pages / 0.52 MByte

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