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FQPF10N60CT
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FQPF10N60CT Datasheet PDF (10 Pages)
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FQPF10N60CT Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
TO-220-3
Power Dissipation
50W (Tc)
Drain to Source Voltage (Vds)
600 V
Input Capacitance (Ciss)
2040pF @25V(Vds)
Power Dissipation (Max)
50W (Tc)

FQPF10N60CT Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Operating Temperature
-55℃ ~ 150℃ (TJ)

FQPF10N60CT Documents

ON Semiconductor
10 Pages / 1.1 MByte
ON Semiconductor
12 Pages / 1.43 MByte

FQPF10N60 Documents

Fairchild
Power Field-Effect Transistor, 9.5A I(D), 600V, 0.73Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220F, 3Pin
ON Semiconductor
MOSFET N-CH 600V 9.5A TO-220F
Fairchild
Trans MOSFET N-CH 600V 9.5A 3Pin(3+Tab) TO-220F Tube
Fairchild
Trans MOSFET N-CH 600V 9A 3Pin(3+Tab) TO-220F Rail
Fairchild
Trans MOSFET N-CH 600V 9.5A 3Pin(3+Tab) TO-220F Rail
ON Semiconductor
MOSFET N-CH 600V 9A TO-220F
ON Semiconductor
MOSFET N-CH 600V 9.5A TO-220F
ON Semiconductor
MOSFET N-CH 600V 9.5A TO-220F
Fairchild
MOSFET N-CH/600V/10A/QFET C-Series
ON Semiconductor
N-Channel QFET® MOSFET 600V, 9.5A, 730mΩ
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