FQPF20N06 Datasheet PDF - Fairchild

●These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology.

●This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as DC/DC converters, high efficiency switching for power management in portable and battery operated products.

●Product Highlights

●15A, 60V, R

●DS(on)

●= 0.06

●W

●@V

●GS

●= 10 V

●Low gate charge ( typical 11.5 nC)

●Low Crss ( typical 25 pF)

●Fast switching

●100% avalanche tested

●Improved dv/dt capability

●175°C maximum junction temperature rating