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Part Datasheet Search > MOSFETs > Infineon > IRFBA90N20DPBF Datasheet PDF
IRFBA90N20DPBF
$ 3.09
IRFBA90N20DPBF Datasheet PDF (9 Pages)
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IRFBA90N20DPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Power Rating
650 W
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.023 Ω
Polarity
N-CH
Power Dissipation
650 W
Threshold Voltage
5 V
Drain to Source Voltage (Vds)
200 V
Breakdown Voltage (Drain to Source)
200 V
Continuous Drain Current (Ids)
98A
Rise Time
160 ns
Input Capacitance (Ciss)
6080pF @25V(Vds)
Fall Time
77 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
650W (Tc)

IRFBA90N20DPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
11 mm
Size-Width
5 mm
Size-Height
16.5 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRFBA90N20DPBF Documents

Infineon
9 Pages / 0.13 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
37 Pages / 2.01 MByte

IRFBA90N20 Documents

Infineon
TO-273AA N-CH 200V 98A
International Rectifier
Single N-Channel 200V 650W 160NC Hexfet Power Mosfet Through Hole - SBM-2
International Rectifier
MOSFET N-CH 200V 98A SUPER-220
Infineon
TO-273AA N-CH 200V 98A
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