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FQPF3N80C Datasheet PDF - Fairchild

Manufacturer:

Fairchild

Category:

High Voltage MOS

Case Package:

TO-220-3

Description:

FAIRCHILD SEMICONDUCTOR FQPF3N80C Power MOSFET, N Channel, 3A, 800V, 4Ω, 10V, 5V

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Documentation:

FQPF3N80C Datasheet (10 Pages)

Package Outline Dimension on8 Page 9 Page

Part Numbering System on2 Page

FQPF3N80C Datasheet PDF (10 Pages)

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FQPF3N80C Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Voltage Rating (DC)

800 V

Current Rating

3.00 A

Case/Package

TO-220-3

Number of Channels

1 Channel

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

4 Ω

Polarity

N-Channel

Power Dissipation

39 W

Threshold Voltage

5 V

Drain to Source Voltage (Vds)

800 V

Breakdown Voltage (Drain to Source)

800 V

Breakdown Voltage (Gate to Source)

±30.0 V

Continuous Drain Current (Ids)

3.00 A

Rise Time

43.5 ns

Input Capacitance (Ciss)

705pF @25V(Vds)

Input Power (Max)

39 W

Fall Time

32 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

39 W

View Datasheet >

FQPF3N80C Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Size-Length

10.16 mm

Size-Width

4.7 mm

Size-Height

9.19 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

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FQPF3N80C Environmental

FQPF3N80C Export Classifications

FQPF3N80C Function Overview

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FQPF3N80C Datasheet

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