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FQT1N60CTF_WS Datasheet PDF - Fairchild

Manufacturer:

Fairchild

Category:

MOSFETs

Case Package:

TO-261-4

Description:

FAIRCHILD SEMICONDUCTOR FQT1N60CTF_WS Power MOSFET, N Channel, 200mA, 600V, 9.3Ω, 10V, 4V

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Documentation:

FQT1N60CTF_WS Datasheet (8 Pages)

Package Outline Dimension on7 Page

Part Numbering System on2 Page

FQT1N60CTF_WS Datasheet PDF (8 Pages)

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FQT1N60CTF_WS Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Case/Package

TO-261-4

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

9.3 Ω

Polarity

N-Channel

Power Dissipation

2.1 W

Threshold Voltage

4 V

Drain to Source Voltage (Vds)

600 V

Continuous Drain Current (Ids)

0.2A

Rise Time

21 ns

Input Capacitance (Ciss)

170pF @25V(Vds)

Input Power (Max)

2.1 W

Fall Time

27 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

2.1W (Tc)

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FQT1N60CTF_WS Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Size-Length

6.7 mm

Size-Width

3.7 mm

Size-Height

1.7 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

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FQT1N60CTF_WS Environmental

FQT1N60CTF_WS Function Overview

FQT1N60CTF_WS Documents

FQT1N60CTF_WS Datasheet

Fairchild

8 Pages / 1.01 MByte

FQT1N60CTF_WS Other Datasheet PDF

Fairchild

10 Pages / 1.18 MByte

FQT1N60CTF_WS Drawing Diagrams

Fairchild

1 Pages / 0.06 MByte

FQT1N60 Documents

FQT1N60CTF_WS Datasheet PDF

Fairchild

FAIRCHILD SEMICONDUCTOR FQT1N60CTF_WS Power MOSFET, N Channel, 200mA, 600V, 9.3Ω, 10V, 4V

FQT1N60CTF-WS Datasheet PDF

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N-Channel QFET MOSFET 600V, 0.2A, 11.5Ω

FQT1N60CTF-WS Datasheet PDF

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N-Channel QFET MOSFET 600V, 0.2A, 11.5Ω

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