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IRFP150N Datasheet PDF - International Rectifier

Manufacturer:

International Rectifier

Category:

MOSFETs

Case Package:

TO-247

Description:

Trans MOSFET N-CH 100V 42A 3Pin (3+Tab) TO-247AC

Pictures:

3D Model

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Product Pictures

Documentation:

IRFP150N Datasheet (10 Pages)

IRFP150N Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Voltage Rating (DC)

100 V

Current Rating

42.0 A

Case/Package

TO-247

Drain to Source Resistance (on) (Rds)

36.0 mΩ

Polarity

N-Channel

Power Dissipation

140 W

Part Family

IRFP150N

Drain to Source Voltage (Vds)

100 V

Breakdown Voltage (Drain to Source)

100 V

Breakdown Voltage (Gate to Source)

±20.0 V

Continuous Drain Current (Ids)

42.0 A

Rise Time

56.0 ns

Power Dissipation (Max)

160 W

View Datasheet >

IRFP150N Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Bulk

View Datasheet >

IRFP150N Environmental

IRFP150N Documents

IRFP150N Datasheet

International Rectifier

10 Pages / 0.12 MByte

IRFP150N Other Datasheet PDF

International Rectifier

9 Pages / 0.17 MByte

IRFP150N Product Catalog

International Rectifier

8 Pages / 0.13 MByte

IRFP150 Documents

IRFP150 Datasheet PDF

International Rectifier

MOSFET N-CH 100V 41A TO-247AC

IRFP150 Datasheet PDF

VISHAY

Trans MOSFET N-CH 100V 41A 3Pin(3+Tab) TO-247AC

IRFP150 Datasheet PDF

IXYS Semiconductor

HIGH VOLTAGE POWER MOSFET DIE

IRFP150 Datasheet PDF

Vishay Siliconix

MOSFET N-CH 100V 41A TO-247AC

IRFP150 Datasheet PDF

Vishay Semiconductor

Trans MOSFET N-CH 100V 41A 3Pin(3+Tab) TO-247AC

IRFP150 Datasheet PDF

Harris

Power Field-Effect Transistor, 40A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

IRFP150 Datasheet PDF

Fairchild

Trans MOSFET N-CH Si 100V 40A 3Pin(3+Tab) TO-247

IRFP150 Datasheet PDF

Intersil

40A 100V 0.055Ω N-CH, Si PMOS TO-247

IRFP150 Datasheet PDF

ST Microelectronics

40A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218

IRFP150 Datasheet PDF

Samsung

Power Field-Effect Transistor, 40A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

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