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Part Datasheet Search > IGBTs > Infineon > FS50R12KT4B15BOSA1 Datasheet PDF
FS50R12KT4B15BOSA1
$ 64.71
FS50R12KT4B15BOSA1 Datasheet PDF (9 Pages)
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FS50R12KT4B15BOSA1 Specifications

TYPE
DESCRIPTION
Number of Pins
28 Pin
Case/Package
AG-ECONO2-6
Number of Positions
28 Position
Polarity
N-Channel
Power Dissipation
280 W
Breakdown Voltage (Collector to Emitter)
1200 V
Input Capacitance (Cies)
2.8nF @25V
Input Power (Max)
280 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
280000 mW

FS50R12KT4B15BOSA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tray
Size-Length
107.5 mm
Size-Width
45 mm
Size-Height
17 mm
Operating Temperature
-40℃ ~ 150℃

FS50R12KT4B15BOSA1 Documents

Infineon
9 Pages / 0.7 MByte
Infineon
73 Pages / 2.93 MByte
Infineon
33 Pages / 2.24 MByte

FS50R12KT4B15 Documents

Infineon
Trans IGBT Module N-CH 1200V 50A 280000mW 28Pin ECONO 2 Tray
Infineon
Igbt-modules
Infineon
Trans IGBT Module N-CH 1200V 50A 280000mW 28Pin ECONO2-6 Tray
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