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GA200SA60U
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GA200SA60U Datasheet PDF (8 Pages)
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GA200SA60U Specifications

TYPE
DESCRIPTION
Mounting Style
Chassis
Number of Pins
4 Pin
Case/Package
SOT-227-4
Power Dissipation
500000 mW
Breakdown Voltage (Collector to Emitter)
600 V
Input Capacitance (Cies)
16.5nF @30V
Input Power (Max)
500 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
500000 mW

GA200SA60U Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Size-Height
12.3 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

GA200SA60U Documents

Vishay Semiconductor
8 Pages / 0.12 MByte
Vishay Semiconductor
8 Pages / 0.19 MByte

GA200SA60 Documents

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600V UltraFast 10-30kHz Single IGBT in a SOT-227 package
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600V DC-1kHz (Standard) Single IGBT in a SOT-227 packagel
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Trans IGBT Chip N-CH 600V 342A 4Pin SOT-227
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