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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXFH80N10 Datasheet PDF
IXFH80N10
$ 7.708
IXFH80N10 Datasheet PDF (2 Pages)
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IXFH80N10 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
TO-247-3
Polarity
N-CH
Power Dissipation
300 W
Drain to Source Voltage (Vds)
100 V
Continuous Drain Current (Ids)
80A
Rise Time
63 ns
Input Capacitance (Ciss)
4800pF @25V(Vds)
Fall Time
26 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
300W (Tc)

IXFH80N10 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended
Packaging
Tube
Size-Length
16.26 mm
Size-Width
5.3 mm
Size-Height
21.46 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFH80N10 Documents

IXYS Semiconductor
2 Pages / 0.08 MByte

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