H11F3SVM Datasheet PDF - Fairchild

●General Description

●The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11FXM series devices are mounted in dual in-line packages.

●Features

●As a remote variable resistor:

●■≤100Ωto ≥300MΩ

●■≥99.9% linearity

●■≤15pF shunt capacitance

●■≥100GΩI/O isolation resistance

●As an analog switch:

●■Extremely low offset voltage

●■60 Vpk-pksignal capability

●■No charge injection or latch-up

●■ton, toff≤15µS

●■UL recognized (File #E90700)

●Applications

●As a remote variable resistor:

●■Isolated variable attenuator

●■Automatic gain control

●■Active filter fine tuning/band switching As an analog switch:

●■Isolated sample and hold circuit

●■Multiplexed, optically isolated A/D conversion