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HGT1S10N120BNS Datasheet PDF - ON Semiconductor

Manufacturer:

ON Semiconductor

Case Package:

TO-263-3

Description:

Trans IGBT Chip N-CH 1200V 35A 298000mW 3Pin(2+Tab) D2PAK Tube

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Documentation:

HGT1S10N120BNS Datasheet (8 Pages)

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HGT1S10N120BNS Datasheet PDF (8 Pages)

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HGT1S10N120BNS Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Case/Package

TO-263-3

Power Dissipation

298000 mW

Breakdown Voltage (Collector to Emitter)

1200 V

Input Power (Max)

298 W

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

298000 mW

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HGT1S10N120BNS Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Operating Temperature

-55℃ ~ 150℃ (TJ)

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HGT1S10N120BNS Environmental

HGT1S10N120BNS Export Classifications

HGT1S10N120BNS Function Overview

HGT1S10N120BNS Documents

HGT1S10N120BNS Datasheet

ON Semiconductor

8 Pages / 0.19 MByte

HGT1S10N120BNS Other Datasheet PDF

ON Semiconductor

18 Pages / 0.94 MByte

HGT1S10N120 Documents

HGT1S10N120BNST Datasheet PDF

Fairchild

FAIRCHILD SEMICONDUCTOR HGT1S10N120BNST IGBT Single Transistor, 35A, 2.45V, 298W, 1.2kV, TO-263AB, 3Pins

HGT1S10N120BNST Datasheet PDF

ON Semiconductor

Trans IGBT Chip N-CH 1200V 35A 298000mW 3Pin(2+Tab) D2PAK T/R

HGT1S10N120BNS Datasheet PDF

Fairchild

Trans IGBT Chip N-CH 1.2kV 35A 3Pin(2+Tab) TO-263AB Rail

HGT1S10N120BNS Datasheet PDF

ON Semiconductor

Trans IGBT Chip N-CH 1200V 35A 298000mW 3Pin(2+Tab) D2PAK Tube

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