HMC326MS8G Datasheet PDF - ADI

●Product Details

●The HMC326MS8G & HMC326MS8GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC driver amplifiers which operate between 3.0 and 4.5 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. The amplifier provides 21 dB of gain and +26 dBm of saturated power from a +5V supply voltage. Power down capability is available to conserve current consumption when the amplifier is not in use. Internal circuit matching was optimized to provide greater than 40% PAE.

●Applications

● Microwave Radios

● Broadband Radio Systems

● Wireless Local Loop Driver Amplifier

●### Features and Benefits

● Psat Output Power: +26 dBm

● > 40% PAE

● Output IP3: +36 dBm

● High Gain: 21 dB

● Vs: +5V

● Ultra Small Package: MSOP8G