HMC349AMS8GE Datasheet PDF - ADI

●Product Details

●The HMC349AMS8G is a gallium arsenide (GaAs), pseudo-morphic high electron mobility transistor (PHEMT), single-pole, double throw (SPDT) switch specified from 100 MHz to 4 GHz.

●The HMC349AMS8G is well suited for cellular infrastructure applications by yielding high isolation of 57 dB, low insertion loss of 0.9 dB, high input IP3 of 52 dBm, and high input P1dB of 34 dBm.

●The HMC349AMS8G operates with a single positive supply voltage from 3 V to 5 V and provides a CMOS-/TTL-compatible control interface.

●The HMC349AMS8G comes in an 8-lead mini small outline package with an exposed pad.

●Applications

● Cellular/4G infrastructure

● Wireless infrastructure 

● Mobile radios 

● Test equipment

●### Features and Benefits

● Nonreflective, 50 Ω design 

● High isolation: 57 dB to 2 GHz 

● Low insertion loss: 0.9 dB to 2 GHz

● High input linearity

● 1 dB power compression (P1dB): 34 dBm typical 

● Third-order intercept (IP3): 52 dBm typical

● High power handling

● 33.5 dBm through path

● 26.5 dBm terminated path

● Single positive supply: 3 V to 5 V

● CMOS-/TTL-compatible control

● All off state control

● 8-lead mini small outline package with exposed pad (MINI_SO_EP)