NSS1C201LT1G Datasheet PDF - ON Semiconductor

●Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN NSS1C201LT1G GP BJT from ON Semiconductor. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 710 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 7 V.