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Part Datasheet Search > TVS Diodes > Infineon > IDH03G65C5 Datasheet PDF
IDH03G65C5
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IDH03G65C5 Datasheet PDF (11 Pages)
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IDH03G65C5 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
2 Pin
Case/Package
TO-220-2
Forward Voltage
1.7V @3A
Power Dissipation
42 W
Thermal Resistance
3.6℃/W (RθJC)
Reverse recovery time
0 ns
Forward Current
3 A
Max Forward Surge Current (Ifsm)
31 A
Maximum Forward Voltage (Max)
2.1 V
Forward Current (Max)
3 A
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Junction Temperature (Max)
175 ℃
Power Dissipation (Max)
42000 mW

IDH03G65C5 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.2 mm
Size-Width
4.5 mm
Size-Height
15.95 mm
Operating Temperature
-55℃ ~ 175℃

IDH03G65C5 Documents

Infineon
11 Pages / 1.14 MByte

IDH03G65 Documents

Infineon
Silicon Carbide Schottky Diode, thinQ 5G 650V Series, Single, 650V, 3A, 5NC, TO-220
Infineon
INFINEON IDH03G65C5 Silicon Carbide Schottky Diode, thinQ 5G 650V Series, Single, 650V, 3A, 5NC, TO-220
Infineon
Diode Schottky 650V 3A To220-2
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