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Part Datasheet Search > IGBTs > Infineon > IGB10N60T Datasheet PDF
IGB10N60T
$ 1.168
IGB10N60T Datasheet PDF (12 Pages)
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IGB10N60T Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Power Rating
110 W
Number of Positions
3 Position
Power Dissipation
110 W
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
110 W

IGB10N60T Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
10.31 mm
Size-Width
9.45 mm
Size-Height
4.57 mm
Operating Temperature
-40℃ ~ 175℃

IGB10N60T Documents

Infineon
12 Pages / 0.58 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
73 Pages / 2.93 MByte
Infineon
48 Pages / 2 MByte

IGB10N60 Documents

Infineon
INFINEON IGB10N60TATMA1 IGBT Single Transistor, 10A, 2.05V, 110W, 600V, TO-263, 3Pins
Infineon
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-263AB, GREEN, PLASTIC, TO-263, 3Pin
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