IPB048N15N5 Datasheet PDF - Infineon

●Description:

●The new OptiMOS™ 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The new products offer a breakthrough reduction in R DS(on) (up to 25 percent compared to the next best alternative in SuperSO8) and Q rr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge (Q rr = 26 nC in SuperSO8) increases commutation ruggedness.

●Summary of Features:

● Lower R DS(on) without compromising FOM gd and FOM oss

● Lower output charge

● Ultra-low reverse recovery charge

● Increased commutation ruggedness

● Higher switching frequency possible

●Benefits:

● Reduced paralleling

● Size reduction enabled with SuperSO8 best-in-class

● Higher power density designs

● More rugged products

● System cost reduction

● Improved EMI behavior