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Part Datasheet Search > MOSFETs > Infineon > IPB200N15N3 G Datasheet PDF
IPB200N15N3 G
$ 2.353
IPB200N15N3 G Datasheet PDF (12 Pages)
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IPB200N15N3 G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Polarity
N-Channel
Power Dissipation
150 W
Drain to Source Voltage (Vds)
150 V
Rise Time
11 ns
Input Capacitance (Ciss)
1820pF @75V(Vds)
Fall Time
6 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
150W (Tc)

IPB200N15N3 G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
10.31 mm
Size-Width
9.45 mm
Size-Height
4.57 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IPB200N15N3 G Documents

Infineon
12 Pages / 0.97 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
7 Pages / 0.07 MByte

IPB200N15N3 Documents

Infineon
OptiMOS„3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
Infineon
D2PAK N-CH 150V 50A
Infineon
Trans MOSFET N-CH 150V 50A 3Pin TO-263 T/R
Infineon
OptiMOS3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
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