IPB65R045C7ATMA1 Datasheet PDF - Infineon

●The IPB65R045C7 is a 650V CoolMOS™ C7 N-channel Power MOSFET features lower gate charge. The CoolMOS™ is a revolutionary technology for high voltage power MOSFET, designed according to the super-junction(SJ) principle and pioneered by Infineon Technologies. The CoolMOS™ C7 combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching super-junction MOSFET offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.

● Increased dV/dt ruggedness

● Better efficiency due to best in class FOM RDS (ON) x Eoss and RDS (ON) x Qg

● Best in class RDS (ON)

● Easy to use/drive

● Halogen-free

● Enabling higher system efficiency

● Enabling higher frequency

● Increased power density solutions

● Size savings due to reduced cooling requirements

● Higher system reliability due to lower operating temperatures

● Reduced energy stored in output capacitance(Eoss)

● Low switching losses

● Outstanding CoolMOS™ quality

●For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended.