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Part Datasheet Search > MOSFETs > Infineon > IPD60N10S4L12ATMA1 Datasheet PDF
IPD60N10S4L12ATMA1
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IPD60N10S4L12ATMA1 Datasheet PDF (9 Pages)
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IPD60N10S4L12ATMA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
9.8 mΩ
Polarity
N-CH
Power Dissipation
94 W
Threshold Voltage
1.6 V
Drain to Source Voltage (Vds)
100 V
Breakdown Voltage (Drain to Source)
100 V
Continuous Drain Current (Ids)
60A
Rise Time
3 ns
Input Capacitance (Ciss)
3170pF @25V(Vds)
Fall Time
21 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
94W (Tc)

IPD60N10S4L12ATMA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
6.5 mm
Size-Width
6.22 mm
Size-Height
2.3 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IPD60N10S4L12ATMA1 Documents

Infineon
9 Pages / 0.12 MByte
Infineon
138 Pages / 12.05 MByte
Infineon
28 Pages / 4.06 MByte
Infineon
56 Pages / 6.94 MByte

IPD60N10S4L12 Documents

Infineon
DPAK N-CH 100V 60A
Infineon
DPAK N-CH 100V 60A
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