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Part Datasheet Search > MOSFETs > Infineon > IPD80R1K0CEATMA1 Datasheet PDF
IPD80R1K0CEATMA1
$ 0.518
IPD80R1K0CEATMA1 Datasheet PDF (15 Pages)
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IPD80R1K0CEATMA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Power Rating
83 W
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.8 Ω
Polarity
N-Channel
Power Dissipation
83 W
Threshold Voltage
3 V
Drain to Source Voltage (Vds)
800 V
Breakdown Voltage (Drain to Source)
800 V
Continuous Drain Current (Ids)
5.7A
Rise Time
15 ns
Input Capacitance (Ciss)
785pF @100V(Vds)
Fall Time
8 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
83 W

IPD80R1K0CEATMA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
6.73 mm
Size-Width
6.22 mm
Size-Height
2.41 mm
Operating Temperature
-55℃ ~ 150℃

IPD80R1K0CEATMA1 Documents

Infineon
15 Pages / 2.26 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
52 Pages / 3.25 MByte
Infineon
37 Pages / 2.01 MByte

IPD80R1K0 Documents

Infineon
DPAK N-CH 800V 5.7A
Infineon
DPAK N-CH 800V 5.7A
Infineon
DPAK N-CH 800V 5.7A
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