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Part Datasheet Search > MOSFETs > Infineon > IPI90R1K2C3XKSA1 Datasheet PDF
IPI90R1K2C3XKSA1
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IPI90R1K2C3XKSA1 Datasheet PDF (10 Pages)
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IPI90R1K2C3XKSA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-262-3
Power Rating
83 W
Polarity
N-Channel
Power Dissipation
83W (Tc)
Drain to Source Voltage (Vds)
900 V
Continuous Drain Current (Ids)
5.10 A
Rise Time
20 ns
Input Capacitance (Ciss)
710pF @100V(Vds)
Fall Time
40 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
83W (Tc)

IPI90R1K2C3XKSA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.2 mm
Size-Width
9.45 mm
Size-Height
4.5 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IPI90R1K2C3XKSA1 Documents

Infineon
10 Pages / 0.25 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
38 Pages / 0.73 MByte
Infineon
37 Pages / 2.01 MByte

IPI90R1K2C3 Documents

Infineon
TO-262 N-CH 900V 5.1A
Infineon
TO-262 N-CH 900V 5.1A
Infineon
Power Field-Effect Transistor,
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