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Part Datasheet Search > MOSFETs > Vishay Semiconductor > SI4804BDY-T1-E3 Datasheet PDF
SI4804BDY-T1-E3
Part 3D Model
$ 0.544
SI4804BDY-T1-E3 Datasheet PDF (1 Pages)
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SI4804BDY-T1-E3 Specifications

TYPE
DESCRIPTION
Number of Pins
8 Pin
Case/Package
SOP
Polarity
Dual N-Channel
Power Dissipation
1100 mW
Drain to Source Voltage (Vds)
30.0 V
Continuous Drain Current (Ids)
7.50 A
Rise Time
10 ns
Fall Time
9 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1100 mW

SI4804BDY-T1-E3 Size & Package

TYPE
DESCRIPTION
Packaging
Tape & Reel (TR)
Size-Height
1.55 mm

SI4804BDY-T1-E3 Documents

Vishay Semiconductor
1 Pages / 0.02 MByte
Vishay Semiconductor
6 Pages / 0.1 MByte

SI4804BDYT1 Documents

Vishay Semiconductor
Trans MOSFET N-CH 30V 5.7A 8Pin SOIC N T/R
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MOSFET N-CH DUAL 30V 5.7A 8-SOIC
VISHAY
Trans MOSFET N-CH 30V 5.7A 8Pin SOIC N T/R
Vishay Siliconix
MOSFET 2N-CH 30V 5.7A 8SOIC
Vishay Semiconductor
Trans MOSFET N-CH 30V 5.7A 8Pin SOIC N T/R
Vishay Semiconductor
MOSFET 30V 7.5A 2W 22mohm @ 10V
Vishay Intertechnology
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