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Part Datasheet Search > Infineon > IPP60R280P7XKSA1 Datasheet PDF
IPP60R280P7XKSA1
$ 1.013

IPP60R280P7XKSA1 Specifications

TYPE
DESCRIPTION
Number of Pins
3 Pin
Case/Package
TO-220-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.214 Ω
Power Dissipation
53 W
Threshold Voltage
3.5 V
Drain to Source Voltage (Vds)
600 V
Rise Time
9 ns
Input Capacitance (Ciss)
761pF @400V(Vds)
Fall Time
9 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
53000 mW

IPP60R280P7XKSA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube

IPP60R280P7XKSA1 Documents

Infineon
14 Pages / 1.62 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
37 Pages / 2.89 MByte
Infineon
37 Pages / 2.01 MByte

IPP60R280P7 Documents

Infineon
Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO220-3
Infineon
The 600V CoolMOS™ P7 is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.
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