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IRFIB6N60APBF Datasheet PDF - Vishay Semiconductor

Manufacturer:

Vishay Semiconductor

Category:

High Voltage MOS

Case Package:

TO-220-3

Description:

VISHAY IRFIB6N60APBF Power MOSFET, N Channel, 5.5A, 600V, 750mohm, 10V, 4V

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Documentation:

IRFIB6N60APBF Datasheet (9 Pages)

Part Numbering System on1 Page

IRFIB6N60APBF Datasheet PDF (9 Pages)

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IRFIB6N60APBF Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

TO-220-3

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

0.75 Ω

Polarity

N-Channel

Power Dissipation

60 W

Threshold Voltage

4 V

Drain to Source Voltage (Vds)

600 V

Continuous Drain Current (Ids)

5.50 A

Input Capacitance (Ciss)

1400pF @25V(Vds)

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

60 W

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IRFIB6N60APBF Size & Package

TYPE

DESCRIPTION

Packaging

Tube

Size-Length

10.41 mm

Size-Width

4.7 mm

Size-Height

9.8 mm

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IRFIB6N60APBF Environmental

IRFIB6N60APBF Function Overview

IRFIB6N60APBF Documents

IRFIB6N60APBF Datasheet

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9 Pages / 0.15 MByte

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Power MOSFET, N Channel, 5.5A, 600V, 750mohm, 10V, 4V

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IRFIB6N60APBF Datasheet PDF

Vishay Intertechnology

Power Field-Effect Transistor, 5.5A I(D), 600V, 0.75Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, FULL PACK-3

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Power MOSFET(Vdss=600V, Rds(on)max=0.75Ω, Id=5.5A)

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