IPW65R080CFDFKSA1 Datasheet PDF - Infineon

●The IPW65R080CFD is a 650V N-channel CoolMOS™ Power MOSFET with integrated fast body diode and improved energy efficiency. The softer commutation behaviour and therefore better EMI behaviour gives this MOSFET a clear advantage. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power conversion systems. The latest state-of-the-art generation of high voltage power MOSFETs makes AC-DC power supplies more efficient, more compact, lighter and cooler than ever before.

● Limited voltage overshoot during hard commutation

● Easy to design in

● Low switching losses due to low Qrr at repetitive commutation on body diode

● Self limiting di/dt and dv/dt

● Low Qoss

● Reduced turn on and turn off delay times