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Part Datasheet Search > MOSFETs > Infineon > IRF1010ESTRLPBF Datasheet PDF
IRF1010ESTRLPBF
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IRF1010ESTRLPBF Datasheet PDF (11 Pages)
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IRF1010ESTRLPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.012 Ω
Polarity
N-Channel
Power Dissipation
200 W
Threshold Voltage
4 V
Input Capacitance
3210 pF
Drain to Source Voltage (Vds)
60 V
Continuous Drain Current (Ids)
84A
Rise Time
78 ns
Input Capacitance (Ciss)
3210pF @25V(Vds)
Input Power (Max)
200 W
Fall Time
53 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
200W (Tc)

IRF1010ESTRLPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
10.67 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRF1010ESTRLPBF Documents

Infineon
11 Pages / 0.21 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
5 Pages / 0.32 MByte
Infineon
10 Pages / 0.14 MByte

IRF1010 Documents

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HEXFET POWER MOSFET
Infineon
TO-220AB N-CH 60V 84A
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TO-220AB N-CH 55V 85A
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TO-220AB N-CH 60V 84A
Infineon
D2PAK N-CH 55V 85A
International Rectifier
MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 12 Milliohms; ID 84A; TO-220AB; PD 200W; gFS 69S
Infineon
D2PAK N-CH 60V 84A
Infineon
D2PAK N-CH 55V 85A
Infineon
D2PAK N-CH 55V 85A
Infineon
D2PAK N-CH 60V 84A
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