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IRF1010NPBF
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IRF1010NPBF Datasheet PDF (9 Pages)
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IRF1010NPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
55.0 V
Current Rating
85 A
Case/Package
TO-220-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
11 mΩ
Polarity
N-Channel
Power Dissipation
180 W
Part Family
IRF1010N
Input Capacitance
3210pF @25V
Drain to Source Voltage (Vds)
55 V
Breakdown Voltage (Drain to Source)
55 V
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
85.0 A
Rise Time
76 ns
Input Capacitance (Ciss)
3210pF @25V(Vds)
Input Power (Max)
180 W
Fall Time
48 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃

IRF1010NPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.66 mm
Size-Width
4.4 mm
Size-Height
16.51 mm
Operating Temperature
-55℃ ~ 175℃

IRF1010NPBF Documents

International Rectifier
9 Pages / 0.22 MByte
International Rectifier
20 Pages / 2.6 MByte

IRF1010 Documents

VISHAY
HEXFET POWER MOSFET
Infineon
TO-220AB N-CH 60V 84A
Infineon
TO-220AB N-CH 55V 85A
Infineon
TO-220AB N-CH 60V 84A
Infineon
D2PAK N-CH 55V 85A
International Rectifier
MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 12 Milliohms; ID 84A; TO-220AB; PD 200W; gFS 69S
Infineon
D2PAK N-CH 60V 84A
Infineon
D2PAK N-CH 55V 85A
Infineon
D2PAK N-CH 55V 85A
Infineon
D2PAK N-CH 60V 84A
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