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Part Datasheet Search > MOSFETs > Vishay Siliconix > IRF510PBF Datasheet PDF
IRF510PBF
$ 0.434
IRF510PBF Datasheet PDF (8 Pages)
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IRF510PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Drain to Source Resistance (on) (Rds)
540 mΩ
Power Dissipation
43 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
100 V
Input Capacitance (Ciss)
180pF @25V(Vds)
Input Power (Max)
43 W
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
43W (Tc)

IRF510PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRF510PBF Documents

Vishay Siliconix
8 Pages / 0.27 MByte
Vishay Siliconix
8 Pages / 0.27 MByte
Vishay Siliconix
1 Pages / 0.13 MByte

IRF510 Documents

VISHAY
Trans MOSFET N-CH 100V 5.6A 3Pin(3+Tab) TO-220AB
Intersil
Trans MOSFET N-CH 100V 5.6A 3Pin(3+Tab) TO-220AB
International Rectifier
HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54Ω, ID = 5.6A
Vishay Siliconix
MOSFET N-CH 100V 5.6A TO-220AB
Fairchild
Trans MOSFET N-CH 100V 5.6A 3Pin (3+Tab) TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 100V 5.6A 3Pin(3+Tab) TO-220AB
VISHAY
TO-220-3 N-CH 100V 5.6A 540mΩ
VISHAY
TO-252-3 N-CH 100V 5.6A 540mΩ
International Rectifier
Transistor MOSFET N Channel 100V 5.6A 3Pin 3+ Tab TO-220AB
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.54Ω; ID 5.6A; TO-220AB; PD 43W; VGS +/-20V
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