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IRF5305L
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IRF5305L Datasheet PDF (11 Pages)
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IRF5305L Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
TO-262-3
Polarity
P-CH
Power Dissipation
3.8W (Ta), 110W (Tc)
Drain to Source Voltage (Vds)
55 V
Continuous Drain Current (Ids)
31A
Input Capacitance (Ciss)
1200pF @25V(Vds)
Power Dissipation (Max)
3.8W (Ta), 110W (Tc)

IRF5305L Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRF5305L Documents

Infineon
11 Pages / 0.17 MByte
Infineon
10 Pages / 0.22 MByte

IRF5305 Documents

International Rectifier
P-Channel MOSFET, Vdss = -55V, Rds = 0.06Ω, Id = -31A, TO-220
Infineon
TO-220AB P-CH 55V 31A
IRF
Power MOSFET(Vdss=-55V, Rds(on)=0.06Ω, Id=-31A)
Kersemi Electronic
HEXFET® Power MOSFET
SHENZHENFREESCALE
HEXFET® Power MOSFET
New Jersey Semiconductor
Trans MOSFET P-CH 55V 31A 3Pin(3+Tab) TO-220ABO
Infineon
TO-220AB P-CH 55V 31A
Infineon
D2PAK P-CH 55V 31A
International Rectifier
MOSFET, Power; P-Ch; VDSS -55V; RDS(ON) 0.06Ω; ID -31A; TO-220AB; PD 110W; VGS +/-20V
Infineon
D2PAK P-CH 55V 31A
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