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IRF5305LPBF
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IRF5305LPBF Datasheet PDF (11 Pages)
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IRF5305LPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-262-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
60 mΩ
Polarity
P-CH
Power Dissipation
3.8 W
Drain to Source Voltage (Vds)
55 V
Continuous Drain Current (Ids)
31A
Rise Time
66 ns
Input Capacitance (Ciss)
1200pF @25V(Vds)
Fall Time
63 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
3.8W (Ta), 110W (Tc)

IRF5305LPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRF5305LPBF Documents

Infineon
11 Pages / 0.68 MByte
Infineon
13 Pages / 0.27 MByte

IRF5305 Documents

International Rectifier
P-Channel MOSFET, Vdss = -55V, Rds = 0.06Ω, Id = -31A, TO-220
Infineon
TO-220AB P-CH 55V 31A
IRF
Power MOSFET(Vdss=-55V, Rds(on)=0.06Ω, Id=-31A)
Kersemi Electronic
HEXFET® Power MOSFET
SHENZHENFREESCALE
HEXFET® Power MOSFET
New Jersey Semiconductor
Trans MOSFET P-CH 55V 31A 3Pin(3+Tab) TO-220ABO
Infineon
TO-220AB P-CH 55V 31A
Infineon
D2PAK P-CH 55V 31A
International Rectifier
MOSFET, Power; P-Ch; VDSS -55V; RDS(ON) 0.06Ω; ID -31A; TO-220AB; PD 110W; VGS +/-20V
Infineon
D2PAK P-CH 55V 31A
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