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IRF530PBF Datasheet PDF - VISHAY

Manufacturer:

VISHAY

Category:

MOSFETs

Case Package:

TO-220-3

Description:

TO-220-3 N-CH 100V 9.2A 270mΩ

Pictures:

3D Model

Symbol

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Pinout

Product Pictures

Documentation:

IRF530PBF Datasheet (9 Pages)

Package Outline Dimension on8 Page

Part Numbering System on1 Page

IRF530PBF Datasheet PDF (9 Pages)

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IRF530PBF Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Voltage Rating (DC)

100 V

Current Rating

14.0 A

Case/Package

TO-220-3

Power Rating

88 W

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

160 mΩ

Polarity

N-Channel

Power Dissipation

88 W

Threshold Voltage

4 V

Drain to Source Voltage (Vds)

100 V

Breakdown Voltage (Gate to Source)

±20.0 V

Continuous Drain Current (Ids)

14.0 A

Rise Time

34 ns

Input Capacitance (Ciss)

670pF @25V(Vds)

Input Power (Max)

88 W

Fall Time

24 ns

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

88 W

View Datasheet >

IRF530PBF Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Size-Length

10.41 mm

Size-Width

4.7 mm

Size-Height

9.01 mm

Operating Temperature

-55℃ ~ 175℃ (TJ)

Minimum Packing Quantity

View Datasheet >

IRF530PBF Environmental

IRF530PBF Function Overview

IRF530PBF Documents

IRF530PBF Datasheet

VISHAY

9 Pages / 0.26 MByte

IRF530PBF Other Datasheet PDF

VISHAY

13 Pages / 0.22 MByte

IRF530PBF Notice File

VISHAY

3 Pages / 0.14 MByte

IRF530 Documents

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International Rectifier

MOSFET N-CH 100V 14A TO-220

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ON Semiconductor

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Fairchild

Trans MOSFET N-CH Si 100V 14A 3Pin(3+Tab) TO-220AB

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Infineon

Power Field-Effect Transistor, 31A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3

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