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Part Datasheet Search > BJTs > ON Semiconductor > MMBT2369ALT1G Datasheet PDF
MMBT2369ALT1G
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MMBT2369ALT1G Datasheet PDF (7 Pages)
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MMBT2369ALT1G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
15.0 V
Current Rating
200 mA
Case/Package
SOT-23-3
Number of Positions
3 Position
Polarity
NPN
Power Dissipation
225 mW
Breakdown Voltage (Collector to Emitter)
15 V
Continuous Collector Current
0.2A
hFE Min
20 @100mA, 1V
Input Power (Max)
225 mW
DC Current Gain (hFE)
40
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
300 mW

MMBT2369ALT1G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
2.9 mm
Size-Width
1.3 mm
Size-Height
0.94 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

MMBT2369ALT1G Documents

ON Semiconductor
7 Pages / 0.22 MByte
ON Semiconductor
36 Pages / 0.15 MByte
ON Semiconductor
6 Pages / 0.08 MByte
ON Semiconductor
5 Pages / 0.31 MByte
ON Semiconductor
1 Pages / 0.13 MByte

MMBT2369ALT1 Documents

ON Semiconductor
SOT-23 NPN 15V 0.2A
Motorola
Switching Transistors
Leshan Radio
Switching Transistors(NPN Silicon)
DB Lectro
Transistor
National Semiconductor
ON Semiconductor
SOT-23 NPN 15V 0.2A
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