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Part Datasheet Search > MOSFETs > International Rectifier > IRF610PBF Datasheet PDF
IRF610PBF
$ 0.309
IRF610PBF Datasheet PDF (8 Pages)
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IRF610PBF Specifications

TYPE
DESCRIPTION
Voltage Rating (DC)
200 V
Current Rating
3.30 A
Case/Package
TO-220-3
Polarity
N-Channel
Power Dissipation
36.0 W
Breakdown Voltage (Drain to Source)
200 V
Continuous Drain Current (Ids)
3.30 A

IRF610PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Bulk

IRF610PBF Documents

International Rectifier
8 Pages / 0.9 MByte

IRF610 Documents

International Rectifier
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
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Vishay Siliconix
MOSFET N-CH 200V 3.3A TO-220AB
Harris
MOSFET N-CH 200V 3.3A TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 200V 3.3A 3Pin(3+Tab) TO-220AB
Fairchild
Trans MOSFET N-CH Si 200V 2.5A 3Pin(3+Tab) TO-220AB
Motorola
2.5A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Samsung
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.58ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
National Semiconductor
TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,3.3A I(D),TO-220AB
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