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IRF610PBF Datasheet PDF - Vishay Semiconductor

Manufacturer:

Vishay Semiconductor

Category:

MOSFETs

Case Package:

TO-220-3

Description:

MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 1.5Ω; ID 3.3A; TO-220AB; PD 36W; VGS +/-20V

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Documentation:

IRF610PBF Datasheet (8 Pages)

Package Outline Dimension on7 Page

IRF610PBF Datasheet PDF (8 Pages)

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IRF610PBF Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Voltage Rating (DC)

200 V

Current Rating

3.30 A

Case/Package

TO-220-3

Power Rating

36 W

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

1.5 Ω

Polarity

N-Channel

Power Dissipation

36 W

Threshold Voltage

4 V

Input Capacitance

140pF @25V

Drain to Source Voltage (Vds)

200 V

Breakdown Voltage (Drain to Source)

200 V

Continuous Drain Current (Ids)

3.30 A

Rise Time

17 ns

Input Capacitance (Ciss)

140pF @25V(Vds)

Fall Time

8.9 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

36 W

View Datasheet >

IRF610PBF Size & Package

TYPE

DESCRIPTION

Packaging

Tube

Size-Length

10.41 mm

Size-Width

4.7 mm

Size-Height

9.01 mm

Operating Temperature

-55℃ ~ 150℃

View Datasheet >

IRF610PBF Environmental

IRF610PBF Function Overview

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IRF610PBF Datasheet

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IRF610PBF Other Datasheet PDF

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IRF610PBF Notice File

Vishay Semiconductor

3 Pages / 0.14 MByte

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