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Part Datasheet Search > MOSFETs > Infineon > IRF6216PBF Datasheet PDF
IRF6216PBF
Part 3D Model
$ 0.44
IRF6216PBF Datasheet PDF (8 Pages)
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IRF6216PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SOIC-8
Power Rating
2.5 W
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.24 Ω
Polarity
P-CH
Power Dissipation
2.5 W
Threshold Voltage
5 V
Drain to Source Voltage (Vds)
150 V
Continuous Drain Current (Ids)
2.2A
Rise Time
15 ns
Input Capacitance (Ciss)
1280pF @25V(Vds)
Fall Time
26 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2500 mW

IRF6216PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
5 mm
Size-Width
4 mm
Size-Height
1.5 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRF6216PBF Documents

Infineon
8 Pages / 0.12 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
9 Pages / 0.12 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte

IRF6216 Documents

International Rectifier
Trans MOSFET P-CH 150V 2.2A 8Pin SOIC
Infineon
SOIC P-CH 150V 2.2A
Infineon
SOIC P-CH 150V 2.2A
Infineon
SOIC P-CH 150V 2.2A
International Rectifier
MOSFET, Power; P-Ch; VDSS -150V; RDS(ON) 0.24Ω; ID -2.2A; SO-8; PD 2.5W; VGS +/-20V
International Rectifier
Trans MOSFET P-CH 150V 2.2A 8Pin SOIC Tube
International Rectifier
Trans MOSFET P-CH 150V 2.2A 8Pin SOIC T/R
Infineon
Trans MOSFET P-CH 150V 2.2A 8Pin SOIC T/R
Infineon
SOIC P-CH 150V 2.2A
Infineon
-150V Single P-Channel HEXFET Power MOSFET in a SO-8 package
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